Heterojunction field-effect transistor
US5151757A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 1991 |
| Grant date | Sep 29, 1992 |
| Priority date | — |
| Expiry date | Oct 24, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/4738
Abstract
A heterojunction field-effect transistor includes a first electron transit channel formation semiconductor layer formed on a substrate and consisting of a compound semiconductor, a first electron supply semiconductor layer formed on the first electron transit channel formation semiconductor layer and consisting of a compound semiconductor, a gate electrode, a source electrode, and a drain electrode formed on the first electron supply semiconductor layer, and a second electron transit channel formation semiconductor layer formed between the substrate and the first electron transit channel formation semiconductor layer. The second electron transit channel formation semiconductor layer consists of a cmpound semiconductor which has electron affinity smaller than that of the first electron transit channel formation semiconductor layer and larger than that of the first electron supply semiconductor layer, and is different from the first electron transit channel formation semiconductor layer in field strength position where a maximum value of an electron velocity is obtained, and is arranged such that an energy level on a bottom of an electron conduction band of the second electron transi…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.