Planar-doped valley field effect transistor (PDVFET)
US5151758A · kind A · utility
8Cited by
1References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 20, 1991 |
| Grant date | Sep 29, 1992 |
| Priority date | — |
| Expiry date | Feb 20, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/228
Abstract
A planar doped valley field effect transistor (PDVFET), which positions more than one two-dimensional electron gas (2DEG) layer within a homo-structure (GaAs), in order to improve the FET's power output. The FET includes two 2DEG donor planes with an undoped GaAs layer therebetween, and a n-doped GaAs layer on the other side of each donor plane. The FET also includes a 2DEG acceptor plane below the n-doped GaAs layer, which is furthest from the contacts. This 2DEG plane combination forms a deep and wide valley in the FET's conduction band, which improves the FET's power output.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.