M-I-M' device and fabrication method
US5152805A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 17, 1991 |
| Grant date | Oct 6, 1992 |
| Priority date | — |
| Expiry date | May 17, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/881
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a microelectronic device of the metal/insulator/metal' type wherein the insulator is an organic material, and a device fabricated thereby. A first electrically conductive lead is conductively adhered to a first portion of a conductive substrate. A monomolecular layer of highly pure p-dodecyloxyphenylcarbamate of 2-(2'-hydroxyethoxy)-5-bromo-7,7,8,8-tetracyanoquinodimethan is deposited on a surface of a second portion of the conductive substrate not including the first portion to form an organic film. Molecules of the monomolecular layer are generally disposed normal to the substrate surface with their dodecyl terminal moieties adjacent the surface. An essentially oxide-free contiguous layer of magnesium is deposited on the organic film. The deposition if performed at a temperature below about 15.degree. C. A layer of silver is deposited on the magnesium layer to substantially cover and conductively adhere to the magnesium layer. A second electrically conductive lead means is conductively adhered to the silver layer by means of a gallium-indium eutectic alloy. The device exhibits rectifying behavior on application of large voltages. Multilayer devices having…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.