Amorphous silicon film, its production and photo semiconductor device utilizing such a film
US5152833A · kind A · utility
4Cited by
8References
1Claims
0Family size
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Key dates
| Filing date | Aug 29, 1990 |
| Grant date | Oct 6, 1992 |
| Priority date | — |
| Expiry date | Aug 29, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An amorphous silicon film contains not less than 30 at. % hydrogen and includes silicon atoms joined with one hydrogen atom and silicon atoms joined with two hydrogen atoms, the ratio of the silicon atoms joined with two hydrogen atoms to the silicon atoms joined with one hydrogen atom being not more than 0.4. This amorphous silicon films is produced by performing plasma-assisted chemical vapor deposition at a substrate temperature of not more than 100.degree. C., while supplying hydrogen and silane in the predetermined ratio, the ratio of the flow of hydrogen to that of silane being not less than 1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.