Apparatus and method for producing silicon single crystal
US5152867A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Jul 19, 1990 |
| Grant date | Oct 6, 1992 |
| Priority date | — |
| Expiry date | Jul 19, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1068
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus and a method for producing a silicon single crystal by the Czochralski method, whereby the silicon single crystal is pulled up from a crucible while the crucible is heated by a side heater in the lateral periphery of the crucible and a bottom heater facing the bottom of the crucible. The outputs of the side heater and bottom heater are controlled independently of each other so that an oxygen concentration in the pull-up direction of the pulled-up silicon single crystal is rendered uniform. In addition to the output control of the heaters, a magnetic field is applied to a molten liquid in the crucible, so that, a dopant concentration in a radial direction of the pulled-up silicon single crystal is rendered uniform.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.