Method of fabricating semiconductor lasers
US5153148A · kind A · utility
11Cited by
8References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 1990 |
| Grant date | Oct 6, 1992 |
| Priority date | — |
| Expiry date | Oct 30, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/095
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention is directed to a semiconductor laser wherein the first embodiment is characterized in that the first upper portion cladding layer is assumed to be a double layer construction, the upper layer portion is assumed to be higher in carrier concentration than the lower layer portion, the series resistance component is restrained, so that the sequential direction voltage V.sub.F may be lowered without damaging the other characteristics such as oscillation start current I th and so on.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.