Magnetic field sensor contacts
US5153557A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 1991 |
| Grant date | Oct 6, 1992 |
| Priority date | — |
| Expiry date | Jan 28, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
Abstract
A magnetic field sensor, such as a magnetoresistor, Hall effect device or magnetotransistor, comprising an active layer of indium antimonide on the surface of a substrate having a length substantially greater than its width. A conductive contact is on the active layer at each end thereof and a plurality of shorting bar contacts are on the active layer and spaced along the length of the active layer between the end contacts. The contacts are each of a thin layer of a highly conductive n-type conductivity semiconductor material which has a low sheet resistivity and a low contact resistance with the active layer. A layer of a conductive metal may be provided on the semiconductor material layer of the contact, and a thin layer of highly conductive n-type indium antimonide may be provided between the semiconductive material layer and the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.