HEMT device with doped active layer
US5153682A · kind A · utility
7Cited by
3References
3Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Feb 25, 1991 |
| Grant date | Oct 6, 1992 |
| Priority date | — |
| Expiry date | Feb 25, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/801
Abstract
A high-mobility semiconductor device having GaAs/AlGaAs hetero junction of the present invention comprises a GaAs active layer and a GaAs contact layer, with a high-carrier concentration AlGaAs barrier layer interposed therebetween, so that the effective carrier concentration of the active layer can be increased and thus the thickness thereof can be reduced, resulting in an increase in the trans-conductance and improvement in the high frequency characteristics. Since the presence of the AlGaAs barrier layer enables selecting etching, such element characteristics as the plane uniformity and reproducibility can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.