Thin-film device
US5153690A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 15, 1990 |
| Grant date | Oct 6, 1992 |
| Priority date | — |
| Expiry date | Oct 15, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6743
Abstract
A thin-film transistor using hydrogenated amorphous silicon (a-Si:H), and particularly a thin-film device such as a thin-film transistor having high conductivity, large drivability and high process margin, and a display panel using the same transistors. The object of the invention is to reduce defects due to shorts between the gate and the source or between the gate and the drain, to prevent signal line defect even in case defects develop due to shorts, and to expand the design margin and process margin in the array. A capacity is connected to the gate electrode of the channel side and a voltage is applied to the gate electrode via the capacity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.