Semiconductor gate-controlled high-power capability bipolar device
US5153695A · kind A · utility
6Cited by
12References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 10, 1990 |
| Grant date | Oct 6, 1992 |
| Priority date | — |
| Expiry date | Sep 10, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/311
Abstract
A gate-turn-off power semiconductor device of the GTO or FCTh type, having a control zone of alternately arranged finely subdivided cathode fingers and gate trenches, wherein the gate trenches are constructed as narrow deep slots, preferably by a crystal-direction-selective wet chemical etching process, while the original substrate surface is retained in the remaining area of the semiconductor substrate. Compared with the conventional "recessed-gate" construction, this quasi-planar construction offers a number of advantages in the electrical behavior, in the integration of auxiliary functions and in the production.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.