Static RAM cell with high speed and improved cell stability
US5153852A · kind A · utility
15Cited by
1References
3Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 3, 1990 |
| Grant date | Oct 6, 1992 |
| Priority date | — |
| Expiry date | Dec 3, 2010 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/412
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The speed and stability of a 4T static RAM cell (10) comprising cross-coupled inverters with two driver transistors (18, 20) and two pass-gate transistors (14,16) are improved by replacing the driver transistors with a modified driver element (33, 35), comprising at least two transistors (18, 18') having common gates and common sources and with a resistor (42) connecting the drains.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.