EEPROM memory system having selectable programming voltage for low power readability
US5153854A · kind A · utility
18Cited by
5References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 23, 1991 |
| Grant date | Oct 6, 1992 |
| Priority date | — |
| Expiry date | May 23, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/26
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory system for the non-volatile storage of digital information. The digital storage element is a semiconductor memory cell which is electrically erasable, readable, and programmable. There is a low voltage read mode provided to decrease system power requirements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.