Process for forming metal deposited film containing aluminum as main component by use of alkyl aluminum hydride
US5154949A · kind A · utility
24Cited by
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48Claims
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Key dates
| Filing date | Feb 28, 1992 |
| Grant date | Oct 13, 1992 |
| Priority date | — |
| Expiry date | Feb 28, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming an additive-containing Al film of good quality according to the CVD method utilizing an alkyl aluminum hydride, a gas containing an additive and hydrogen, which is an excellent deposited film formation process also capable of selective deposition of additive-containing Al.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.