Method for manufacturing an amorphous silicon thin film solar cell and Schottky diode on a common substrate
US5155565A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 1990 |
| Grant date | Oct 13, 1992 |
| Priority date | — |
| Expiry date | Apr 24, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A thin film p-i-n solar cell and Schottky barrier diode are fabricated adjacent one another on a common flexible polyimide substrate. A titanium nitride diffusion barrier prevents contaminants of an aluminum contact layer on the substrate from reacting with the semiconductor body of the solar cell and diode during subsequent fabrication. An n.sup.+ -type hydrogenated amorphous silicon layer overlies the layer of titanium nitride, and forms an ohmic contact with the solar cell and diode. The diode includes an n-type layer of silicon doped with phosphorus to a concentration of 10.sup.18 to 10.sup.20 atoms per cubic centimeter to increase its forward current density. The solar cell and diode are separated from one another by an epoxy strip. A top conducting oxide layer forms a Schottky barrier with the semiconductor body of the diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.