High area capacitor formation using material dependent etching
US5155657A · kind A · utility
92Cited by
7References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 1991 |
| Grant date | Oct 13, 1992 |
| Priority date | — |
| Expiry date | Oct 31, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/714
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a capacitor having increased capacitance comprising one or more main vertical trenches and one or more lateral trenches extending off the main vertical trench. The capacitor has alternating first and second regions, preferably silicon and non-silicon regions (for example, alternating silicon and germanium or alternating silicon and carbon regions). The etch characteristics of the alternating regions are utilized to selectively etch lateral trenches thereby increasing the surface area and capacitance of the capacitor. A method of fabricating the capacitors is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.