Thin film transistor, manufacturing method thereof and matrix circuit board and image display device each using the same
US5157470A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 1991 |
| Grant date | Oct 20, 1992 |
| Priority date | — |
| Expiry date | May 21, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/1368
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed are a thin film transistor comprising a first electrode pattern formed on an insulating substrate as a gate electrode, a first insulating film formed as a gate insulating film and covering at least the electrode pattern, a semiconductor thin film pattern mainly composed of silicon formed on the insulating film, the semiconductor thin film pattern overlapping the first electrode pattern and the existing region thereof being limited, second and third electrodes formed on the semiconductor thin film pattern as a drain electrode and a source electrode, the second and third electrodes covering a portion of the semiconductor thin film pattern and being spaced apart each other, and a thin film containing silicon oxide formed over the semiconductor film, the second and third electrodes being formed upon the silicon oxide film, a method of manufacturing the thin film transistor, an active matrix circuit board using the thin film transistors, and an image display device using the active matrix circuit board.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.