Semiconductor device having a particular conductive lead structure
US5157475A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 7, 1991 |
| Grant date | Oct 20, 1992 |
| Priority date | — |
| Expiry date | Jan 7, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin semiconductor device comprises a die pad (52) having a first thickness, a semiconductor chip (51) mounted on the die pad (52), a plurality of conductive leads (54) each having at least a portion having a second thickness greater than the first thickness, and conductors (53) interconnecting the semiconductor chip (51) and the leads (54). The semiconductor device is sealed in a resin molding having the second thickness with portions of the leads (54) exposed. In sealing the semiconductor device in the resin molding by molding, the semiconductor device is held between the upper and lower dies of a molding die defining a cavity having a thickness equal to the second thickness to prevent the melted resin (55) from flowing and forming a thin film over the surfaces of the leads to be exposed. In modification, an extended portion having the second thickness of each lead (54) is extended toward the adjacent lead (54) and is bent, and insulating reinforcing members are held by the extended portions of the leads to prevent the separation of the leads from the resin molding and to improve the mechanical strength of the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.