High-speed low-power consumption sense amplifier circuit incorporated in semiconductor memory device
US5157632A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 29, 1990 |
| Grant date | Oct 20, 1992 |
| Priority date | — |
| Expiry date | Oct 29, 2010 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/062
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A sense amplifier circuit is provided in association with a column of memory cells through first and second bit lines for increasing a small difference in voltage level between the first and second bit lines and comprises first and second series combinations of field effect transistors coupled in parallel between a power voltage level and a discharging transistor, in which an auxiliary current path is established in parallel to a main current path produced in the second series combination while the small difference is increased, thereby accelerating the increasing operation of the small difference without any sacrifice of current consumption in the idling stage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.