Process for forming a contact structure
US5158910A · kind A · utility
62Cited by
5References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 26, 1990 |
| Grant date | Oct 27, 1992 |
| Priority date | — |
| Expiry date | Nov 26, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/106
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Self-aligned and/or isolated contacts are formed in a semiconductor device, while simultaneously providing device planarization. In one form, an imagable material is deposited directly on a substrate material. The imagable material is patterned to form a sacrifical plug on a portion of the substrate material. A substantially planar insulating layer is then deposited overlying the substrate material. The plug formed of the imagable material is then removed, thereby exposing a portion of the substrate material and defining a contact opening. A conductive layer is deposited and patterned to complete formation of a contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.