Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate
US5159413A · kind A · utility
138Cited by
21References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 11, 1990 |
| Grant date | Oct 27, 1992 |
| Priority date | — |
| Expiry date | Dec 11, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/704
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and processing technique is provided for monolithic integration of a single crystal compound element semiconductor on a ceramic substrate. A high resistivity semi-insulating buffer layer is epitaxially grown on the ceramic substrate and has an elastically transitional lattice constant matching at its lower surface the lattice constant of the ceramic substrate, and matching at its upper surface the lattice constant of the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.