Titanium-tungsten target material for sputtering and manufacturing method therefor
US5160534A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 31, 1991 |
| Grant date | Nov 3, 1992 |
| Priority date | — |
| Expiry date | May 31, 2011 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3414
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Ti-W target material for sputtering includes a structure composed of a W phase, a Ti phase, and a Ti-W alloy phase of which 20% or more consist of the area ratio of a micro structure covering the cross section of the Ti-W target material. The Wi-W target material further includes dispersed tungsten particles, the Ti-W alloy phases substantially surrounding the W grains, and the Ti phases dispersed adjacent to the Ti-W alloy phase or the W grains. The formation of the Ti-W alloy phases is capable of reducing a substantial amount of the Ti phase in the target material. It is thus possible to prevent the generation of particles attributable to a difference between sputtering speeds of Ti and Ti-W.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.