Method of manufacturing mono-layer capacitors
US5160762A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 29, 1991 |
| Grant date | Nov 3, 1992 |
| Priority date | — |
| Expiry date | May 29, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/1227
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing monolayer capacitors having a ferroelectric layer on the basis of titanium as a dielectric on a substrate, the ferroelectric layer being located between a first and a second noble metal electrode, in which the ferroelectric layer is formed as a barium titanate layer having a layer thickness in the range of from 0.2 to 0.6 .mu.m in that a stable solution of salts of carbonic acids, alkoxides and/or acetyl acetonates is applied and is thermally decomposed at temperatures in the range of from 500.degree. to 700.degree. C., the solution constituting the ferroelectric layer being adjusted so that after the thermal decomposition process an excess quantity of titanium oxide of about 1 mol. % is obtained, and this coating process being repeated until the desired layer thickness is attained, after which the second noble metal electrode is provided on the ferroelectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.