Alignment technique for masked ion beam lithography
US5160845A · kind A · utility
Inventors
Key dates
| Filing date | Mar 6, 1991 |
| Grant date | Nov 3, 1992 |
| Priority date | — |
| Expiry date | Mar 6, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3045
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The ion beam which performs the printing on the resist through the mask is also used to perform the alignment function. Alignment marks are initially provided on the wafer of a material which emits light when an ion beam impinges thereon, such as silicon dioxide. An ion mask, preferably of silicon, is then positioned over the wafer and alignment marks and ions are directed to the alignment marks through the mask. The degree of alignment is determined by the amount of light emitted by the alignment marks since more ions will strike the alignment marks with increased alignment. The emitted light is detected and +X, -X, +Y, -Y and +theta and -theta error signals are provided on a continuous basis for closed loop control of the mask relative to the wafer under proper alignment is achieved. The control is provided by scanning the emitted light from six appropriately positioned alignment marks on the wafer, comparing the intensity of the emitted light in terms of +X amd -X signals to provide an X error signal, doing the same with the Y and theta signals to provide Y and theta error signals and then digitizing each of the error signals in a digital to analog converter. The digitized signa…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.