Patent · US Expired

MOSFET switch circuit for preventing the switch being turned on during deactivation of an inductive load

US5160862A · kind A · utility

2Cited by

4References

3Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Ludwig Leipold · Munich, DE
Hubert Rothleitner · Villach, AT
Rainald Sander · Oberhaching, DE
Jenoe Tihanyi · Tauberbischofsheim, DE

Key dates

Filing date	Nov 6, 1991
Grant date	Nov 3, 1992
Priority date	—
Expiry date	Nov 6, 2011

Classification

Technology area (CPC H)Electricity
CPC primaryH03K17/6877
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

In order to rapidly reduce the magnetic energy of an inductive load (2), the driving voltage must be high. When the load (2) is disconnected via a MOSFET (3), then a premature activation of the MOSFET (3) given reversal of the voltage at the inductive load (2) must be prevented. A series circuit of a Zener diode and of a controllable switch (3) is connected between the gate and the load (2). A current source (depletion MOSFET 5) whose current is lower than the current that would flow upon Zener breakdown is connected between the gate and the source of the power MOSFET (1). The MOSFET (3) becomes conductive upon Zener breakdown and the energy is quickly reduced by a high voltage, essentially by the Zener voltage.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.