High speed optosemiconductor device having multiple quantum wells
US5160993A · kind A · utility
7Cited by
5References
24Claims
0Family size
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Key dates
| Filing date | Jun 6, 1991 |
| Grant date | Nov 3, 1992 |
| Priority date | — |
| Expiry date | Jun 6, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In an optosemiconductor device including a superlattice configuration (TBQ) of first and second quantum well layers and a potential barrier therebetween, photo-excited carriers are formed in the first quantum well layer and are tunnelled through the potential barrier toward the second quantum well layer, so that the tunneled carriers are accumulated in the second quantum well layer. An electric field is applied to the superlattice configuration to expel the tunneled carriers from the second quantum well layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.