Bipolar transistor and manufacturing method thereof
US5162244A · kind A · utility
2Cited by
7References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 31, 1989 |
| Grant date | Nov 10, 1992 |
| Priority date | — |
| Expiry date | May 31, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/911
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method for manufacturing a high speed bipolar transistor having vertically an emitter zone, a base zone and a collector zone comprising steps of: shielding an active region; forming a bird's beak as a spacer by a field oxidation and etching; forming a base terminal; forming an emitter zone; and metallizing. By the method, a minimum spacing is effectively achieved between the base terminal and the emitter zone of the transistor by utilizing a bird's beak as a spacer by which an exact self alignment between the base terminal and the emitter zone is naturally effected.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.