Method of forming a via having sloped sidewalls

US5162261A · kind A · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Clyde R. Fuller · Plano, US
• Victor Sutcliffe · Leuven, BE

Key dates

• Filing date: Jan 10, 1992
• Grant date: Nov 10, 1992
• Expiry date: Jan 10, 2012

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76804
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A sputter-etch process is used to etch vias having substantially vertical sidewalls, such that a sloped sidewall is formed. Using a silicon dioxide layer in which to form the vias, slopes of approximately 45.degree. may be obtained. A second insulator layer may be provided to protect the leads and other portions of the device during the sputter-etch to prevent damage.