Semiconductor cell memory with current sensing
US5163022A · kind A · utility
33Cited by
6References
45Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jan 30, 1992 |
| Grant date | Nov 10, 1992 |
| Priority date | — |
| Expiry date | Jan 30, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/419
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The disclosure includes feeding a current I.sub.R to only BIT lines selected, or feeding current I.sub.R transiently to only the BIT lines switched from unselected to selected states; and a sense amplifier for detecting the difference between the currents flowing in selected BIT lines to read out stored information, wherein current I.sub.R and cell current I.sub.cell have a relation of I.sub.R >I.sub.cell. The BiC MOS memory has high speed, low power and high integration density. Diodes are provided between the memory cell and the BIT lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.