Patent · US Expired

Method of manufacturing a polycrystalline semiconductor resistance layer of silicon on a silicon body and silicon pressure sensor having such a resistance layer

US5164338A · kind A · utility

19Cited by

8References

12Claims

0Family size

Assignee

U.S. Philips Corporation · US

Inventors

Volker Graeger · Kürten, DE
Rolf U. D. Kobs · Tornesch, DE
Horst Schafer · Aschaffenburg, DE
Heinrich Zeile · Hamburg, DE

Key dates

Filing date	Oct 24, 1990
Grant date	Nov 17, 1992
Priority date	—
Expiry date	Oct 24, 2010

Classification

Technology area (CPC H)Electricity
CPC primaryH01C10/10
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

The invention relates to a method of manufacturing a polycrystalline semiconductor resistance layer of silicon on a silicon body. First an insulating layer is formed on the silicon body and then a polycrystalline silicon layer is deposited. To the deposited polycrystalline silicon layer is applied a further polycrystalline silicon layer having a crystallite structure coarser with respect to that of the first polycrystalline silicon layer. The two polycrystalline silicon layers are additionally doped.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.