Fabrication of oxynitride frontside microstructures
US5164339A · kind A · utility
23Cited by
23References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 28, 1991 |
| Grant date | Nov 17, 1992 |
| Priority date | — |
| Expiry date | May 28, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/159
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Method for producing a low stress silicon oxynitride microstructure on a semiconductor substrate at temperatures not higher than 500.degree. C. The method is particularly adapted for forming integrated silicon sensors where the oxynitride microstructure is fabricated on a substrate under conditions which do not harm the integrated circuit electronics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.