Liquid crystal device including tantalum nitride with specific nitriding ratio
US5164850A · kind A · utility
8Cited by
7References
11Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jan 23, 1991 |
| Grant date | Nov 17, 1992 |
| Priority date | — |
| Expiry date | Jan 23, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A metal-insulator-metal substrate for a liquid crystal display device including an insulating substrate; a first conductor layer of tantalum nitride formed on a region of the insulating substrate; an insulator layer formed to cover at least a portion of the first conductor layer; a second conductor layer formed to cover at least a portion of the insulator layer; and a pixel element formed on another region of the insulating substrate and connected to the second conductor layer, one of the conductor layers having a nitriding ratio in the range of 0.05 to 0.14 or being formed of sublayers having different nitriding ratios.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.