Gate multiplexed low noise charge pump
US5164889A · kind A · utility
9Cited by
1References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 10, 1991 |
| Grant date | Nov 17, 1992 |
| Priority date | — |
| Expiry date | Oct 10, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03L7/0895
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A charge pump having gate control voltages multiplexed to gates of FET driver circuits to precisely control charge injected by the charge pump to a low pass filter network. Large capacitors between the supply voltages and the respective gate control voltage derived from the particular supply voltage provide greater noise immunity which further reduces phase errors introduced by injected charge variations. The large capacitors help to hold the gate voltages constant, further controlling the injected charge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.