Vertical cavity surface emitting laser with lateral injection
US5164949A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 1991 |
| Grant date | Nov 17, 1992 |
| Priority date | — |
| Expiry date | Sep 9, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/18369
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A planar semiconductor laser having low thermal and series resistance is fabricated. The semiconductor laser has an optical waveguide and a lateral current injection path provided by a conductive region. The conductive region disorders the active region and the first 1/4 wave stack of the laser, which reduces the reflectivity, therefore allowing control of the optical waveguide independent of the current flow. By forming the conductive region, the laser of the present invention can have stable optical characteristics and a bigger emission spot due to the weak built-in waveguide, thus resulting in the formation of a device having high output and a low thermal and series resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.