Method and apparatus for measuring temperature based on infrared light
US5165791A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 1991 |
| Grant date | Nov 24, 1992 |
| Priority date | — |
| Expiry date | Sep 13, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J2005/0077
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of using infrared light for measuring the temperature of a semiconductor element with a surface layer formed by two kinds of materials that have different emissivities and optical reflectances is disclosed. The method includes the step of taking an image with diffused light reflected from the surface of a semiconductor element by an image taking device. The method further includes determining the area ratio with which each of the two kinds of materials occupy the surface of the semiconductor element by comparing the average brightness value of the image by the image taking device with the brightness value of an image wherein each of the materials independently forms the surface layer of the above semiconductor element, obtaining a weighted average of the emissivities of the materials with the area ratio at which each of the materials occupies on the surface of the semiconductor element, and calculating the temperature of the semiconductor element based on the weighted average and the actual amount of infrared emission.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.