Copper conductive composition for use on aluminum nitride substrate
US5165986A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 1991 |
| Grant date | Nov 24, 1992 |
| Priority date | — |
| Expiry date | Jun 5, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31678
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Aluminum nitride (AIN), due to its high thermal conductivity, is an attractive substrate material to the power hybrid market, (i.e., users employing circuits utilizing power semiconductors resulting in a great deal of heat being produced by the electronic device). In spite of its attractive thermal, mechanical and dielectric properties, AlN substrates generally afford certain drawbacks, the primary drawback being that many conductive compositions do not readily adhere to the surface. One of the more desirable conductors to utilize in conductive compositions when producing microcircuits is copper. In accordance with the present invention, a copper containing conductive composition is provided which affords excellent adhesion to AlN substrates. The conductive composition preferably comprises copper or a copper alloy, a glass binder, and cadmium oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.