BIMOS transistor devices having bipolar and MOS transistors formed in substrate thereof and process for the fabrication of the same
US5166082A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 1991 |
| Grant date | Nov 24, 1992 |
| Priority date | — |
| Expiry date | Jun 10, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/009
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention provides devices each of which has at least one bipolar transistor and at least one MOS transistor, both formed on a substrate. This invention also provides their fabrication process. Each device is constructed of epitaxial layers of a first and second conductivity types, surfaces of said epitaxial layers being partly exposed, at least one MOS transistor formed in the epitaxial layer of the first conductivity type, and at least one bipolar transistor formed in the epitaxial layer of the second conductivity type. Its fabrication process comprises the steps of forming the epitaxial layer of the second conductivity type on the semiconductor substrate, forming the epitaxial layer of the first conductivity type on a part of the epitaxial layer of the second conductivity type, forming the bipolar transistor in the epitaxial layer of the second conductivity type and then forming the MOS transistor in the epitaxial layer of the first conductivity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.