Method of manufacturing a thin film transistor
US5166085A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 2, 1990 |
| Grant date | Nov 24, 1992 |
| Priority date | — |
| Expiry date | Apr 2, 2010 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136227
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
First, a gate metal layer, a gate insulating film, a semiconductor layer, an n-type semiconductor layer, and an ohmic metal layer formed on a substrate in the order mentioned. Then, the film and the layers are patterned into those having the same shape and size. Next, a source metal layer and a drain metal layer are formed on the ohmic metal layer. Further, a portion of the ohmic metal layer, a portion of said source metal layer, and a portion of said drain metal layer are etched, thereby forming a channel portion. Finally, a transparent electrode is formed on the source metal layer, thus manufacturing a TFT. Since the film and the layer, the major components of the TFT, are sequentially formed, and are patterned simultaneously, the TFT can be manufacture with high yield. Further, since the transparent electrode is formed on the uppermost layer, i.e., the source metal layer, the pixel has a great opening ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.