Dry-etched amorphous silicon device with recessed electrode
US5166757A · kind A · utility
9Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 26, 1990 |
| Grant date | Nov 24, 1992 |
| Priority date | — |
| Expiry date | Mar 26, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dry-etched amorphous silicon device which includes an amorphous silicon layer between upper and lower electrodes wherein the adverse effects of dangling silicon bonds on the periphery of the amorphous silicon layer are avoided by cutting back the peripheral surface of at least one of the electrodes to be radially inward of the peripheral surface of the amorphous silicon layer by at least one micron with respect to an axis of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.