Insulated gate field-effect transistor with pulse-shaped doping
US5166765A · kind A · utility
142Cited by
4References
5Claims
0Family size
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Key dates
| Filing date | Aug 26, 1991 |
| Grant date | Nov 24, 1992 |
| Priority date | — |
| Expiry date | Aug 26, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/371
Abstract
A silicon MOSFET is provided, which can be made with an effective channel length of under one micrometer without incurring severe short-channel effects. The MOSFET includes first and second channel regions located between the source and drain regions, the first channel region overlaying the second channel region. The second channel region has a higher carrier density than the first channel region, and functions as a buried ground plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.