Method of forming polycrystalline silicon layer on semiconductor wafer
US5167758A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 8, 1989 |
| Grant date | Dec 1, 1992 |
| Priority date | — |
| Expiry date | Jun 8, 2009 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B11/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a polycrystalline silicon layer on a semiconductor wafer is disclosed having the steps of placing the semiconductor wafers in a predetermined number of recesses formed on a mold body, then creating a mold by securing a mold cover in contact with the front surface of the mold body, rotating the mold by a rotor in the heating inert gas of a melting furnace, maintaining the wafer temperature in the range of 1300.degree. C. to 1350.degree. C., pouring heated melted silicon from an inlet opened at the center of the mold cover into a passage recessed at the center of the mold body, flowing the heated melted silicon radially by centrifugal force to fill the melted silicon in a laminated layer air gap formed between the surface of the wafer placed in the recess and the mold cover, cooling to solidify the melted silicon and obtain a product with the polycrystalline silicon layer formed from the melted silicon on the wafer, and opening the mold cover from the mold body to remove the product from the mold body. Thus, the method can readily form an accumulated layer of the thickness of 100 micron at an extremely high speed with sufficient economy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.