Ultra-high-speed photoconductive devices using semi-insulating layers
US5168069A · kind A · utility
5Cited by
21References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 17, 1989 |
| Grant date | Dec 1, 1992 |
| Priority date | — |
| Expiry date | Feb 17, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/971
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An ultra-high-speed photoconductive device is described which comprises a homoepitaxial semi-insulating III-V layer, or body, upon which ohmic/conductive contacts, or strips, separated by a small gap, are formed. The semi-insulating body, or layer, is produced by low temperature growth of III-V compounds by MBE. In a GaAs embodiment, the layer is grown under arsenic stable growth conditions, at a substrate temperature preferably in the range of 150.degree. to about 300.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.