Heterojunction impatt diode
US5168328A · kind A · utility
2Cited by
4References
23Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 3, 1990 |
| Grant date | Dec 1, 1992 |
| Priority date | — |
| Expiry date | Jul 3, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/40
Abstract
A GaAs/AlGaAs heterojunction IMPATT diode is described. The AlGaAs n-type avalanche layer is graded so that a 0.30 eV bandgap discontinuity of the pn heterojunction is provided without any bandgap discontinuity at the avalanche/drift layer interface. Minority carriers in the p-type GaAs layer are concentrated at the junction due to the discontinuity which occurs primarily in the conduction band thereby concentrating the zero bias electric field and thus minimizing the voltage drop across the avalanche layer. Furthermore, the zero bias depletion width is increased due to the increased field, which lowers the device capacitance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.