Thermoelectric semiconductor having a porous structure deaerated in a vacuum and thermoelectric panel using p-type and n-type thermoelectric semiconductors
US5168339A · kind A · utility
49Cited by
5References
25Claims
0Family size
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Key dates
| Filing date | Apr 22, 1991 |
| Grant date | Dec 1, 1992 |
| Priority date | — |
| Expiry date | Apr 22, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/93
Abstract
A thermoelectric semiconductor device having a porous structure and an air-tight sealing structure maintaining it in a deaerated state is disclosed. A refrigeration panel comprising a plurality of p-type and n-type semiconductor elements each having a structure mentioned above, in which the elements are arranged alternatively and electrically connected in series is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.