Method of determining end of cleaning of semiconductor manufacturing apparatus
US5169407A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 1990 |
| Grant date | Dec 8, 1992 |
| Priority date | — |
| Expiry date | Dec 7, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for determining an end of cleaning of a semiconductor manufacturing apparatus according to the invention, when the interior of a semiconductor substrate process chamber of the semiconductor manufacturing apparatus is cleaned by dry etching using plasma discharge, a constant current or voltage is supplied from a high-frequency power source to discharge electrodes during plasma discharge, an impedance between the electrodes or a temperature in the process chamber is monitored, a time point at which the impedance or temperature is abruptly changed is detected, and this time point of detection is determined to be an end of cleaning.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.