Control of crystallite size in diamond film chemical vapor deposition
US5169676A · kind A · utility
23Cited by
3References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 16, 1991 |
| Grant date | Dec 8, 1992 |
| Priority date | — |
| Expiry date | May 16, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/30
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In depositing an adhering, continuous, polycrystalline diamond film of optical or semiconductor quality on a substrate, as by forming on the substrate a layer of a refractory nitride interlayer and depositing diamond on the interlayer without mechanical treatment or seeding of the substrate or the interlayer, the substrate is heated in a vacuum chamber containing a microwave activated mixture of hydrogen and a gas including carbon, and the size of deposited diamond crystallites and their rate of deposition selectively varied by a bias voltage applied to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.