Method of manufacturing step cut type insulated gate SIT having low-resistance electrode
US5169795A · kind A · utility
6Cited by
5References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 20, 1991 |
| Grant date | Dec 8, 1992 |
| Priority date | — |
| Expiry date | Aug 20, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention provides a step cut type insulated gate static induction tsistor having a first main electrode formed in one major surface of a semiconductor substrate, a second main electrode formed in a bottom portion of a U-shaped groove formed in one major surface of a semiconductor substrate, a control electrode formed on a side wall of the U-shaped groove and consisting of a thin insulating film and a polysilicon layer, and a low-resistance electrode of a refractory metal layer or a refractory metal silicide layer formed in at least part of the side wall of the polysilicon layer of the control electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.