Electron-emitting device and process for making the same
US5170092A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 16, 1990 |
| Grant date | Dec 8, 1992 |
| Priority date | — |
| Expiry date | May 16, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J9/025
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron-emitting device including; electrical insulating substrates (1); an intermediate layer having a metal layer (2) and an insulating material layer (3) or having an insulating material layer (3), superposed in the thickness direction of said electrical insulating substrates (1) so as to be provided between said electrical insulating substrates (1) in the manner that it is recessed from one side surfaces of said electrical insulating substrates (1); a cathode material (4) provided at the middle portion of said intermediate layer, one end of said cathode material (4) protruding from the insulating material layer (3) that constitutes said intermediate layer; and a gate electrode (5) provided on said electrical insulating substrate (1) on the side where said intermediate layer is recessed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.