Plasma processing method and apparatus for use in carrying out the same
US5170098A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 1992 |
| Grant date | Dec 8, 1992 |
| Priority date | — |
| Expiry date | May 15, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3341
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus is provided which includes a plasma reaction chamber in which plasma is generated for processing, an RF power supply for feeding RF power into the plasma reaction chamber through an impedance matching circuit, and a feedback mechanism for maintaining plasma impedance within the plasma reaction chamber substantially constant, the feedback mechanism containing the impedance matching circuit which also functions as impedance sensing means. Also provided is a plasma processing method including the step of etching or depositing films by using plasma, while maintaining plasma impedance substantially constant by applying feedback to at least one selected from the group consisting of gas pressure in the plasma reaction chamber, rate of gas flow into the plasma reaction chamber, magnetic field, microwave power, and RF power.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.