Opto-electronic integrated circuit
US5170228A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 19, 1990 |
| Grant date | Dec 8, 1992 |
| Priority date | — |
| Expiry date | Mar 19, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/103
Abstract
Present invention is to provide a process for producing an opto-electronic integrated circuit comprising a field effect transistor as an electronic device and a photo-diode as an optical device both formed on an InP substrate, PA0 the field effect transistor comprising a high electron mobility transistor having: PA0 a GaInAs layer epitaxially grown in the InP substrate in a preset region thereof, a n-AlInAs layer epitaxially grown on the GaInAs layer, a gate electrode formed on the AlInAs layer, and a source electrode and a drain electrode formed on the AlInAs layer with the gate electrode therebetween, and PA0 the photo-diode comprising a PIN photo-diode having: PA0 the GaInAs layer epitaxially grown on the InP substrate near the region of the field effect transistor simultaneously with the growth of that of the field effect transistor, the n-AlInAs layer epitaxially grown on the GaInAs layer simultaneously with the growth of that of the field effect transistor, a n-InP layer epitaxially grown on the n-AlInAs layer, an undoped GaInAs layer epitaxially grown on the n-InP layer in a preset region thereof, a p-GaInAs layer epitaxially grown on the undoped GaInAs layer, an anode elect…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.