Metal insulator semiconductor transistor having guard region and semiconductor device having the same
US5170241A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 1990 |
| Grant date | Dec 8, 1992 |
| Priority date | — |
| Expiry date | Dec 6, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
Abstract
A field effect transistor includes a semiconductor substrate having a first conduction type and functioning as a drain of the field effect transistor, and a back gate region formed in the semiconductor substrate and having a second conduction type opposite to the first conduction type. The field effect transistor also includes a source region formed in the back gate region and having the first conduction type, an insulator film formed on the semiconductor substrate and having first and second windows, and a gate electrode covered by the insulator film and located so that a channel is formed in the back gate region. Further, the field effect transistor includes a guard region formed in the semiconductor substrate and located close to the back gate region. The guard region has the second conduction type, and has a first portion located on a first side of the guard region facing the back gate region and a second portion located on a second side opposite to the first side. A first breakdown voltage obtained at a first junction between the second portion and the semiconductor substrate is lower than that obtained at a second junction between the back gate region and the semiconductor su…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.